@Article{SchneiderPWZCARCSMO:2014:SyStDo,
               author = "Schneider, J. M. and Peres, M. L. and Wiedmann, S. and Zeitler, U. 
                         and Chitta, V. A. and Abramof, Eduardo and Rappl, Paulo Henrique 
                         de Oliveira and Castro, S. De and Soares, D. A. W. and Mengui, 
                         {\'U}rsula Andr{\'e}ia and Oliveira Jr., N. F.",
          affiliation = "Instituto de F{\'{\i}}sica, Universidade de S{\~a}o Paulo 
                         (USP.IF) and {Universidade Federal de Itajub{\'a} (UNIFEI)} and 
                         {Radboud University Nijmegen} and {Radboud University Nijmegen} 
                         and Instituto de F{\'{\i}}sica, Universidade de S{\~a}o Paulo 
                         (USP.IF) and {Instituto Nacional de Pesquisas Espaciais (INPE)} 
                         and {Instituto Nacional de Pesquisas Espaciais (INPE)} and 
                         {Universidade Federal de Itajub{\'a} (UNIFEI)} and {Universidade 
                         Federal de Itajub{\'a} (UNIFEI)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)} and Instituto de F{\'{\i}}sica, 
                         Universidade de S{\~a}o Paulo (USP.IF)",
                title = "Systematic study of doping dependence on linear magnetoresistance 
                         in p -PbTe",
              journal = "Applied Physics Letters",
                 year = "2014",
               volume = "105",
               number = "16",
             keywords = "Doping dependence, Linear magnetoresistance, PbTe, Systematic 
                         study.",
             abstract = "We report on a large linear magnetoresistance effect observed in 
                         doped p-PbTe films. While undoped p-PbTe reveals a sublinear 
                         magnetoresistance, p-PbTe films doped with BaF2 exhibit a 
                         transition to a nearly perfect linear magnetoresistance behaviour 
                         that is persistent up to 30 T. The linear magnetoresistance slope 
                         R/B is to a good approximation, independent of temperature. This 
                         is in agreement with the theory of Quantum Linear 
                         Magnetoresistance. We also performed magnetoresistance simulations 
                         using a classical model of linear magnetoresistance. We found that 
                         this model fails to explain the experimental data. A systematic 
                         study of the doping dependence reveals that the linear 
                         magnetoresistance response has a maximum for small BaF2 doping 
                         levels and diminishes rapidly for increasing doping levels. 
                         Exploiting the huge impact of doping on the linear 
                         magnetoresistance signal could lead to new classes of devices with 
                         giant magnetoresistance behavior.",
                  doi = "10.1063/1.4900486",
                  url = "http://dx.doi.org/10.1063/1.4900486",
                 issn = "0003-6951",
                label = "scopus 2014-11 SchneiderPWZCARCSM:2014:SyStDo",
             language = "en",
        urlaccessdate = "27 abr. 2024"
}